doc. no : qw0905- rev. : a date : - 2005 single digit led display (0.3 inch) LSD3014-XX data sheet ligitek electronics co.,ltd. property of ligitek only 23 - dec. LSD3014-XX
note : 1.all dimension are in millimeters and (lnch) tolerance is 0.25(0.01") unless otherwise noted. 2.specifications are subject to change without notice. package dimensions part no. ligitek electronics co.,ltd. property of ligitek only LSD3014-XX page 1/7 7.62 (0.3") 2.54*4= 10.16(0.4") r.dp g f e d c b a pin no.1 l s d 3 0 1 4 - x x l i g i t e k 19.0 (0.75") 10.0 (0.39") 5.4 (0.21") 5.0 0.5 7.5 (0.295") 0.45 typ 0.9
ligitek electronics co.,ltd. property of ligitek only internal circuit diagram part no. page2/7 LSD3014-XX LSD3014-XX dp g f e d c b a 6 1, 7 3 2 4 5 8 9 10
ligitek electronics co.,ltd. property of ligitek only 9 10 8 6 7 5 LSD3014-XX 3 4 2 pin no. 1 part no. electrical connection anode e anode f common cathode anode g anode rdp anode c 3/7 page LSD3014-XX anode a anode d common cathode anode b
reverse current per any chip ir 10 a operating temperature storage temperature LSD3014-XX part no solder temperature 1/16 inch below seating plane for 3 seconds at 260 part selection and application information(ratings at 25) note : 1.the forward voltage data did not including 0.1v testing tolerance. 2. the luminous intensity data did not including 15% testing tolerance. common cathode -25 ~ +85 -25 ~ +85 material gaasp/gap orange emitted chip (nm) p ( nm) common cathode or anode 635 45 tstg t opr max. 2.6 1.72.1 min. typ. 1.01.75 min. typ. electrical vf(v)iv(mcd) iv-m 2:1 part no. peak forward current per chip (duty 1/10,0.1ms pulse width) power dissipation per chip forward current per chip absolute maximum ratings at ta=25 ratings ligitek electronics co.,ltd. property of ligitek only parameter pd i fp i f symbol unit ma ma mw 100 120 e 30 page 4/7 LSD3014-XX
vr=5v ir iv-m luminous intensity matching ratio symbol test condition for each parameter parameter luminous intensity per chip peak wavelength forward voltage per chip spectral line half-width reverse current any chip part no. mcd iv p nm a nm unit vfvolt if=10ma if=20ma if=20ma test condition if=20ma ligitek electronics co.,ltd. property of ligitek only page5/7 LSD3014-XX
fig.3 forward voltage vs. temperature fig.5 relative intensity vs. wavelength ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a wavelength (nm) f o r w a r d v o l t a g e @ 2 0 m a n o r m a l i z e @ 2 5 fig.4 relative intensity vs. temperature ambient temperature( ) r e l a t i v e i n t e n s i t y @ 2 0 m a n o r m a l i z e @ 2 5 typical electro-optical characteristics curve forward voltage(v) fig.1 forward current vs. forward voltage f o r w a r d c u r r e n t ( m a ) forward current(ma) fig.2 relative intensity vs. forward current r e l a t i v e i n t e n s i t y n o r m a l i z e @ 2 0 m a ligitek electronics co.,ltd. property of ligitek only 1.0 0.1 1.0 10 100 1000 1.0101001000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40-200204060 1.0 1.1 1.2 550 600 0.0 0.5 1.0 2.03.04.05.0 80100 0.8 0.9 -20 -40 40 20 080100 60 2.0 0.0 0.5 1.0 1.5 2.5 3.0 650 part no. 700750 e chip page6/7 LSD3014-XX
the purpose of this is the resistance of the device which is laid under condition of low temperature for hours. the purpose of this test is the resistance of the device under tropical for hours. the purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. this test intended to see soldering well performed or not. this test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. solderability test 1.t.sol=230 5 2.dwell time=5 1sec 1.t.sol=260 5 2.dwell time= 10 1sec. 1.ta=65 5 2.rh=90%~95% 3.t=240hrs 2hrs 1.ta=105 5 &-40 5 (10min) (10min) 2.total 10 cycles solder resistance test high temperature high humidity test thermal shock test mil-std-202: 208d mil-std-750: 2026 mil-std-883: 2003 jis c 7021: a-2 mil-std-202: 210a mil-std-750: 2031 jis c 7021: a-1 mil-std-202: 107d mil-std-750: 1051 mil-std-883: 1011 mil-std-202:103b jis c 7021: b-11 the purpose of this is the resistance of the device which is laid under condition of high temperature for hours. ligitek electronics co.,ltd. property of ligitek only this test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. reliability test: part no. 1.ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs) 1.ta=105 5 2.t=1000 hrs (-24hrs, +72hrs) 1.under room temperature 2.if=10ma 3.t=1000 hrs (-24hrs, +72hrs) low temperature storage test high temperature storage test operating life test test item test condition jis c 7021: b-12 mil-std-750: 1026 mil-std-883: 1005 jis c 7021: b-1 mil-std-883:1008 jis c 7021: b-10 reference standard description 7/7 page LSD3014-XX
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